The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Feb. 21, 2007
Shih Chang Chang, Hsinchu, TW;
De-hua Deng, Taoyuan Hsien, TW;
Chun-hsiang Fang, Yilan Hsien, TW;
Yaw-ming Tsai, Taichung Hsien, TW;
Chang-ho Tseng, Sinwu Township, TW;
Shih Chang Chang, Hsinchu, TW;
De-Hua Deng, Taoyuan Hsien, TW;
Chun-Hsiang Fang, Yilan Hsien, TW;
Yaw-Ming Tsai, Taichung Hsien, TW;
Chang-Ho Tseng, Sinwu Township, TW;
TPO Displays Corp., Chu-nan, TW;
Abstract
A self-aligned LDD TFT and a fabrication method thereof. The method includes providing a semiconductor layer. A first masking layer is provided over a first region of the semiconductor layer, said first masking layer comprising a material that provide a permeable barrier to a dopant. The semiconductor layer is exposed, including the first region covered by the first masking layer, to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking layer.