The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Apr. 22, 2008
Applicant:
Kenji Hiratsuka, Yokohama, JP;
Inventor:
Kenji Hiratsuka, Yokohama, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0232 (2006.01);
U.S. Cl.
CPC ...
Abstract
A new structure of a semiconductor optical device and a method to produce the device are disclosed. One embodiment of the optical device of the invention provides a blocking region including, from the side close to the mesa, a p-type first layer and a p-type second layer. The first layer is co-doped with an n-type impurity and a p-type impurity. The doping concentration of the p-type impurity in the first layer is smaller than that in the second layer, so, the first layer performs a function of a buffer layer for the Zn diffusion from the second layer to the active layer in the mesa structure.