The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Dec. 10, 2008
Applicants:
Takafumi Oka, Tokyo, JP;
Masatsugu Kusunoki, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Shinji Abe, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Inventors:
Takafumi Oka, Tokyo, JP;
Masatsugu Kusunoki, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Shinji Abe, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/60 (2006.01); H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 27/15 (2006.01); H01L 29/16 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2006.01); G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.