The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Jul. 11, 2006
Applicants:
Farid Bensebaa, Gatineau, CA;
Pascal L'ecuyer, Montréal, CA;
Jianfu Ding, Gloucester, CA;
Andrea Firth, Ottawa, CA;
Inventors:
Farid Bensebaa, Gatineau, CA;
Pascal L'Ecuyer, Montréal, CA;
Jianfu Ding, Gloucester, CA;
Andrea Firth, Ottawa, CA;
Assignee:
National Research Council of Canada, Ottawa, CA;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Hybrid semiconductor materials have an inorganic semiconductor incorporated into a hole-conductive fluorene copolymer film. Nanometer-sized particles of the inorganic semiconductor may be prepared by mixing inorganic semiconductor precursors with a steric-hindering coordinating solvent and heating the mixture with microwaves to a temperature below the boiling point of the solvent.