The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2011

Filed:

Nov. 10, 2005
Applicants:

David Van Steenwinckel, Holsbeek, BE;

Peter Zandbergen, Hechtel-Eksel, BE;

Inventors:

David Van Steenwinckel, Holsbeek, BE;

Peter Zandbergen, Hechtel-Eksel, BE;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of achieving frequency doubled lithographic patterning is described. An optical pattern () having a first period (p) is used to expose conventional acid-catalysed photoresist () on substrate (), leaving regions of high exposure (), regions of low exposure () and intermediate regions (). Processing proceeds leaving regions () which received high exposure very polar, i.e. hydrophilic, regions () of low exposure very apolar, i.e. hydrophobic, and the intermediate regions having intermediate polarity. A developer of intermediate polarity such as propylene glycol methyl ether acetate is then used to dissolve only the intermediate regions () leaving photoresist patterned to have a pitch (p) half that of the optical period (p). Alternatively, the photoresist is removed from the apolar and polar regions leaving only the intermediate regions () again with the same pitch (p) half that of the optical period (p).


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