The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Oct. 27, 2004
Kenichi Inoue, Kobe, JP;
Hiroyuki Takamatsu, Kobe, JP;
Takashi Kobori, Kobe, JP;
Kazushi Hayashi, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Kenichi Inoue, Kobe, JP;
Hiroyuki Takamatsu, Kobe, JP;
Takashi Kobori, Kobe, JP;
Kazushi Hayashi, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Kabushiki Kaisha Kobe Seiko Sho, Hyogo, JP;
Abstract
A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate. As a result, the adverse effect of high-energy particles and the like is suppressed to efficiently form a satisfactory thin film by an evaporation or sputtering process, which has less restriction to a source material gas, without the need for large equipment.