The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Oct. 24, 2007
Tsun-neng Yang, Taipei, TW;
Shan-ming Lan, Taoyuan County, TW;
Chin-chen Chiang, Taoyuan County, TW;
Wei-yang MA, Taipei County, TW;
Chien-te Ku, Taoyuan County, TW;
Tsun-Neng Yang, Taipei, TW;
Shan-Ming Lan, Taoyuan County, TW;
Chin-Chen Chiang, Taoyuan County, TW;
Wei-Yang Ma, Taipei County, TW;
Chien-Te Ku, Taoyuan County, TW;
Atomic Energy Council - Institute of Nuclear Energy Research, Lungtan, Taoyuan, TW;
Abstract
A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.