The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2011

Filed:

Nov. 27, 2007
Applicants:

Hyung-rok OH, Gyeonggi-do, KR;

Woo-yeong Cho, Gyeonggi-do, KR;

Sang-beom Kang, Gyeonggi-do, KR;

Joon-min Park, Seoul, KR;

Inventors:

Hyung-rok Oh, Gyeonggi-do, KR;

Woo-yeong Cho, Gyeonggi-do, KR;

Sang-beom Kang, Gyeonggi-do, KR;

Joon-min Park, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit memory device includes an array of nonvolatile memory cells (e.g., variable resistance cells) having a first plurality of lines electrically coupled to memory cells therein. A read/write control circuit is provided. The read/write control circuit includes a read/write merge circuit and a column selection circuit. The read/write control circuit, which is configured to drive a selected one of the first plurality of lines with unequal write and read voltages during respective write and read operations, includes a compensating unit. This compensating unit is configured to provide a read compensation current to the selected one of the first plurality of lines circuit during the read operation.


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