The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2011

Filed:

Oct. 22, 2008
Applicants:

Yin Tat MA, Thousand Oaks, CA (US);

Jonathan Hacker, Thousand Oaks, CA (US);

Karim S. Boutros, Malibu, CA (US);

Inventors:

Yin Tat Ma, Thousand Oaks, CA (US);

Jonathan Hacker, Thousand Oaks, CA (US);

Karim S. Boutros, Malibu, CA (US);

Assignee:

The Boeing Company, Chicago, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P 1/10 (2006.01); H01P 5/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

Devices and systems for using a Gallium Nitride-based (GaN-based) transistor for selectively switching signals are provided. A first transmission line is configured to connect a common connection and a first connection. A first Gallium-Nitride-based (GaN-based) transistor has a first terminal coupled to the first transmission line at a first point, a second terminal coupled to a relative ground, and a third terminal configured to be coupled to a first control connection. A second GaN-based transistor has a first terminal coupled to the first transmission line at a second point, a second terminal configured to be coupled to the relative ground, and a third terminal configured to be coupled to the first control connection.


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