The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Aug. 14, 2007
James J. Bucchignano, Yorktown Heights, NY (US);
Mary Beth Rothwell, Ridgefield, CT (US);
Robert Luke Wisneiff, Ridgefield, CT (US);
Roy Rongquing Yu, Poughkeepsie, NY (US);
James J. Bucchignano, Yorktown Heights, NY (US);
Mary Beth Rothwell, Ridgefield, CT (US);
Robert Luke Wisneiff, Ridgefield, CT (US);
Roy Rongquing Yu, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A microelectronic structure, and in particular a semiconductor structure, includes a substrate that includes an alignment mark comprising a substantially present element that has an atomic number at least 5 greater than a highest atomic number substantially present element within the substrate. Alignment to the alignment mark may be effected using an electron beam as an alignment beam with respect to both a direct write exposure and a reticle filtered optical exposure of a mask layer (i.e., photoresist mask layer) located over the alignment mark and the substrate. The electron beam alignment beam may effectively penetrate through other layers, including conductor layers comprising elements having appropriately low atomic number, located interposed between the alignment mark and the mask layer.