The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Nov. 13, 2001
Tomotaka Fujisawa, Tokyo, JP;
Tomotaka Fujisawa, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
There are provided a semiconductor device including a photo receiving region having high photosensitivity by forming an antireflection film capable of both decreasing a reflectance and lowering a surface level density, and a manufacturing method of the semiconductor device. The semiconductor device includes an antireflection filmcomprised of a laminated film including a first insulating filmformed on the surface of a silicon substrateand a second insulating filmhaving a refractive index different from that of the first insulating filmformed above the first insulating film in a light-receiving areaof a semiconductor photo receiving region PD, and in which the first insulating filmis comprised of a silicon oxide film formed by oxidizing silicon on the surface of the semiconductor photo receiving region PD. Further, the semiconductor photo receiving region PD has a configuration such that it may receive light having a wavelength 500 nm or less. Furthermore, when this semiconductor device is manufactured, in the state in which the silicon surface which serves as a light-receiving portion of the photodiode PD is exposed, the silicon oxide filmis formed by thermally oxidizing silicon in the atmosphere of oxygen gas or in the atmosphere of mixed gas of oxygen and hydrogen at a temperature of 800° C. or more.