The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2011

Filed:

Mar. 07, 2007
Applicants:

Young-woo Park, Seoul, KR;

Jung-dal Choi, Gyeonggi-do, KR;

Jae-sung Sim, Gyeonggi-do, KR;

Inventors:

Young-Woo Park, Seoul, KR;

Jung-Dal Choi, Gyeonggi-do, KR;

Jae-Sung Sim, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device (e.g., a non-volatile memory device) with improved data retention characteristics includes active regions that protrude above a top surface of a device isolation region. A tunneling insulating layer is formed on the active regions. Charge storage patterns (e.g., charge trap patterns) are formed so as to be spaced apart from each other. A blocking insulating layer and a gate are formed on the charge storage patterns.


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Park, Young-Woo. (2011). Semiconductor device with charge storage pattern and method for fabricating the same (U.S. Patent No. 7893484). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7893484

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