The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2011

Filed:

Apr. 22, 2009
Applicants:

Chul-sung Kim, Gyeonggi-do, KR;

Young-jin Noh, Gyeonggi-do, KR;

Bon-young Koo, Gyeonggi-do, KR;

Sung-kweon Baek, Gyeonggi-do, KR;

Inventors:

Chul-sung Kim, Gyeonggi-do, KR;

Young-jin Noh, Gyeonggi-do, KR;

Bon-young Koo, Gyeonggi-do, KR;

Sung-kweon Baek, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate having a surface, buried isolation regions protruding from the surface of the semiconductor substrate, and a first insulating layer on the surface of the semiconductor substrate between the isolation regions and including a fluorine, nitrogen, and/or heavy hydrogen impurity. A floating electrode is on the first insulating layer, a second insulating layer is on the floating electrode and the isolation regions, and a control gate electrode is on the second insulating layer. Related methods of forming semiconductor devices are also disclosed.


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