The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2011

Filed:

Aug. 10, 2009
Applicants:

June Cline, Essex Junction, VT (US);

Dinh Dang, Essex Junction, VT (US);

Mark Lagerquist, Essex Junction, VT (US);

Jeffrey C. Maling, Essex Junction, VT (US);

Lisa Y. Ninomiya, Essex Junction, VT (US);

Bruce W. Porth, Essex Junction, VT (US);

Steven M. Shank, Essex Junction, VT (US);

Jessica A. Trapasso, Essex Junction, VT (US);

Inventors:

June Cline, Essex Junction, VT (US);

Dinh Dang, Essex Junction, VT (US);

Mark Lagerquist, Essex Junction, VT (US);

Jeffrey C. Maling, Essex Junction, VT (US);

Lisa Y. Ninomiya, Essex Junction, VT (US);

Bruce W. Porth, Essex Junction, VT (US);

Steven M. Shank, Essex Junction, VT (US);

Jessica A. Trapasso, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/108 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor structure. A hard mask layer is on a top substrate surface of a semiconductor substrate. The hard mask layer includes a hard mask layer opening through which a portion of the top substrate surface is exposed to a surrounding ambient. The hard mask layer includes a pad oxide layer on the top substrate surface, a nitride layer on the pad oxide layer, a BSG (borosilicate glass) layer on top of the nitride layer, and an ARC (anti-reflective coating) layer on top of the BSG layer. A BSG side wall surface of the BSG layer is exposed to the surrounding ambient through the hard mask layer opening.


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