The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Aug. 20, 2008
Jong Heon Yang, Daejeon, KR;
IN Bok Baek, Chungcheongbuk-do, KR;
Chang Geun Ahn, Daejeon, KR;
Chan Woo Park, Daejeon, KR;
An Soon Kim, Daejeon, KR;
Han Young Yu, Daejeon, KR;
Chil Seong Ah, Daejeon, KR;
Tae Youb Kim, Seoul, KR;
Myung Sim Jun, Daejeon, KR;
Moon Gyu Jang, Daejeon, KR;
Jong Heon Yang, Daejeon, KR;
In Bok Baek, Chungcheongbuk-do, KR;
Chang Geun Ahn, Daejeon, KR;
Chan Woo Park, Daejeon, KR;
An Soon Kim, Daejeon, KR;
Han Young Yu, Daejeon, KR;
Chil Seong Ah, Daejeon, KR;
Tae Youb Kim, Seoul, KR;
Myung Sim Jun, Daejeon, KR;
Moon Gyu Jang, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.