The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2011

Filed:

Jun. 15, 2009
Applicant:

John Kevin Twynam, Yamatokooriyama, JP;

Inventor:

John Kevin Twynam, Yamatokooriyama, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

In an electronic device of the present invention a gate Schottky electrode is formed on an active layer constructed of a GaN layer and an AlGaN layer, and a source ohmic electrode and a drain ohmic electrode are further formed on both sides of the gate Schottky electrode on the active layer. A dielectric layer (TiOlayer) of a stepwise laminate structure is formed on the AlGaN layer so that the electric field distribution between the gate Schottky electrode and the drain ohmic electrode is substantially uniformed. The dielectric constant of TiOof the dielectric layer is made higher than the dielectric constant of GaN and AlGaN of the active layer.


Find Patent Forward Citations

Loading…