The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Aug. 28, 2007
Shigeki Takahashi, Okazaki, JP;
Takashi Nakano, Nukata-gun, JP;
Nozomu Akagi, Nukata-gun, JP;
Yasushi Higuchi, Okazaki, JP;
Tetsuo Fujii, Toyohashi, JP;
Yoshiyuki Hattori, Aichi-gun, JP;
Makoto Kuwahara, Nagoya, JP;
Kyoko Okada, Nagoya, JP;
Shigeki Takahashi, Okazaki, JP;
Takashi Nakano, Nukata-gun, JP;
Nozomu Akagi, Nukata-gun, JP;
Yasushi Higuchi, Okazaki, JP;
Tetsuo Fujii, Toyohashi, JP;
Yoshiyuki Hattori, Aichi-gun, JP;
Makoto Kuwahara, Nagoya, JP;
Kyoko Okada, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.