The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Apr. 26, 2006
Je Won Kim, Kyungki-do, KR;
Jeong Tak OH, Kyungki-do, KR;
Dong Joon Kim, Seoul, KR;
Sun Woon Kim, Seoul, KR;
Jin Sub Park, Kyungki-do, KR;
Kyu Han Lee, Kyungki-do, KR;
Je Won Kim, Kyungki-do, KR;
Jeong Tak Oh, Kyungki-do, KR;
Dong Joon Kim, Seoul, KR;
Sun Woon Kim, Seoul, KR;
Jin Sub Park, Kyungki-do, KR;
Kyu Han Lee, Kyungki-do, KR;
Samsung LED Co,; Ltd., Gyunggi-do, KR;
Abstract
Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type AlInGaN (where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1), a multiple quantum well-structured active layer made of undoped InGaN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type InGaN (where 0≦y<1) formed on the active layer and a second layer made of p-type AlInGaN (where 0<x≦1, 0≦y≦1, and 0<x+y≦1) formed on the first layer.