The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Jun. 11, 2009
Keum Bum Lee, Gyeonggi-do, KR;
Hye Jin Seo, Gyeonggi-do, KR;
Hyung Suk Lee, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A phase change memory device is presented that has a lower electrode contact that has a gradient resistance profile ranging from a lower resistive lower end to a higher resistive upper end. The phase change memory device includes a semiconductor substrate, a lower electrode contact, and a phase change pattern. The semiconductor substrate has a switching device. The lower electrode contact is formed on the switching device and has a specific resistance which gradually increases from a lower part to an upper part of the lower electrode contact. The phase change pattern layer is formed on the lower electrode contact.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile