The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
May. 17, 2010
Mohamed-ali Hasan, Concord, NC (US);
Mohamed-Ali Hasan, Concord, NC (US);
The University of North Carolina at Charlotte, Charlotte, NC (US);
Abstract
The present invention relates to alternative methods for the production of crystalline silicon compounds and/or alloys such as silicon carbide layers and substrates. In one embodiment, a method of the present invention comprises heating a porous silicon deposition surface of a porous silicon substrate to a temperature operable for epitaxial deposition of at least one atom or molecule, contacting the porous silicon deposition surface with a reactive gas mixture comprising at least one chemical species comprising a group IV element and at least one silicon chemical species, and depositing a silicon-group IV element layer on the porous silicon deposition surface. In another embodiment, the chemical species comprising a group IV element can be replaced with a transition metal species to form a silicon silicide layer.