The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Oct. 31, 2007
Tsun-neng Yang, Taipei, TW;
Shan-ming Lan, Taoyuan County, TW;
Chin-chen Chiang, Taoyuan County, TW;
Wei-yang MA, Taipei County, TW;
Chien-te Ku, Taoyuan County, TW;
Yu-hsiang Huang, Taoyuan County, TW;
Tsun-Neng Yang, Taipei, TW;
Shan-Ming Lan, Taoyuan County, TW;
Chin-Chen Chiang, Taoyuan County, TW;
Wei-Yang Ma, Taipei County, TW;
Chien-Te Ku, Taoyuan County, TW;
Yu-Hsiang Huang, Taoyuan County, TW;
Abstract
A method is disclosed to make a multi-crystalline silicon film of a solar cell. The method includes the step of providing a ceramic substrate, the step of providing a titanium-based film on the ceramic substrate, the step of providing a p-type back surface field layer on the titanium-based film, the step of providing a p-type light-soaking layer on the p-type back surface field layer and the step of conducting n-type diffusive deposition of phosphine on the p-type light-soaking layer based on atmospheric pressure chemical vapor deposition, thus forming an n-type emitter on the p-type light-soaking layer.