The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Mar. 06, 2008
Roland Hampp, Poughkeepsie, NY (US);
Manfred Eller, Beacon, NY (US);
Jin-ping Han, Fishkill, NY (US);
Matthias Lipinski, Poughkeepsie, NY (US);
Roland Hampp, Poughkeepsie, NY (US);
Manfred Eller, Beacon, NY (US);
Jin-Ping Han, Fishkill, NY (US);
Matthias Lipinski, Poughkeepsie, NY (US);
Infineon Technologies AG, Neubiberg, DE;
Abstract
The prevention of active area loss in the STI model is disclosed which results in an improved device performance in devices manufactured according to the process flow. The process generally shared among the multiple various embodiments inverts the current conventional STI structure towards a process flow where an insulator is patterned with tapered trenches. A segregation layer is formed beneath the surface of the insulator in the tapered trenches. The tapered trenches are then filled with a semiconductor material which is further processed to create a number of active devices. Therefore, the active devices are created in patterned dielectric instead of the STI being created in the semiconductor substrate of the active devices.