The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Mar. 16, 2007
Stephane Monfray, Grenoble, FR;
Thomas Skotnicki, Crolles-Montfort, FR;
Didier Dutartre, Meylan, FR;
Alexandre Talbot, Grenoble, FR;
Stephane Monfray, Grenoble, FR;
Thomas Skotnicki, Crolles-Montfort, FR;
Didier Dutartre, Meylan, FR;
Alexandre Talbot, Grenoble, FR;
STMicroelectronics SA, Montrouge, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.