The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Jun. 21, 2006
Ludovic Ecarnot, Vif, FR;
Willy Michel, Grenoble, FR;
Patrick Reynaud, Saint Martin d'Here, FR;
Walter Schwarzenbach, Saint Nazaire les Eymes, FR;
Ludovic Ecarnot, Vif, FR;
Willy Michel, Grenoble, FR;
Patrick Reynaud, Saint Martin d'Here, FR;
Walter Schwarzenbach, Saint Nazaire les Eymes, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
The present invention provides improved methods for fabricating compound-material wafers, in particular a silicon on insulator type wafer. The improved methods lead to reduced numbers of deflects arising on or near the periphery of the wafers. In a first method, wafers are selected in dependence on edge roll off values determined at about 0.5-2.5 mm away from the edge of the wafer, where edge roll off values are determined in dependence on the second derivative of the wafer height profiles. In a second method, wafers selected according to the first method are further processed by bonding, forming a splitting layer, and detaching the two wafers at the splitting layer.