The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Mar. 11, 2010
Hideo Hosono, Kanagawa, JP;
Kazushige Ueda, Kanagawa, JP;
Masataka Yahagi, Ibaraki, JP;
Hideo Takami, Ibaraki, JP;
Hideo Hosono, Kanagawa, JP;
Kazushige Ueda, Kanagawa, JP;
Masataka Yahagi, Ibaraki, JP;
Hideo Takami, Ibaraki, JP;
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Abstract
A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying ABO(ZnO), 1<m, X≦m, 0<Y≦0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.