The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Feb. 06, 2009
Applicant:
Xin-shan LI, Shiojiri, JP;
Inventor:
Xin-shan Li, Shiojiri, JP;
Assignee:
Seiko Epson Corporation, Shinjuku-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/22 (2006.01); H04R 17/00 (2006.01); B23P 17/00 (2006.01); B21D 53/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a step of forming a piezoelectric precursor film, an application solution is applied onto each of flow passage forming substrate wafers to form piezoelectric precursor films one by one on each of the plurality of flow passage forming substrate wafers constituting a flow passage forming substrate wafer group, and an order of the flow passage forming substrate wafers for starting the application of the application solution to be turned into each of the piezoelectric precursor films is varied by the predetermined number of wafers of the flow passage forming substrate wafer group.