The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
May. 29, 2008
Hyoung-soo Ko, Seoul, KR;
Eun-sik Kim, Seoul, KR;
Sung-dong Kim, Seongnam-si, KR;
Ju-hwan Jung, Seoul, KR;
Hong-sik Park, Seoul, KR;
Chul-min Park, Yongin-si, KR;
Seung-bum Hong, Seongnam-si, KR;
Hyoung-soo Ko, Seoul, KR;
Eun-sik Kim, Seoul, KR;
Sung-dong Kim, Seongnam-si, KR;
Ju-hwan Jung, Seoul, KR;
Hong-sik Park, Seoul, KR;
Chul-min Park, Yongin-si, KR;
Seung-bum Hong, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.