The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Feb. 06, 2008
Jae-chul Park, Seoul, KR;
Jae-woong Hyun, Uijeongbu-si, KR;
Young-soo Park, Yongin-si, KR;
Sun-il Kim, Yongin-si, KR;
Jae-chul Park, Seoul, KR;
Jae-woong Hyun, Uijeongbu-si, KR;
Young-soo Park, Yongin-si, KR;
Sun-il Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A nonvolatile semiconductor device according to example embodiments may include a plurality of memory cells on a semiconductor substrate and at least one selection transistor on the semiconductor substrate, wherein the at least one selection transistor may be disposed at a different level from the plurality of memory cells. The at least one selection transistor may be connected to a data line and/or a power source line via a first contact and/or a third contact, respectively. The at least one selection transistor may be connected to the plurality of memory cells via a second contact and/or a fourth contact. The active layer of the at least one selection transistor may contain an oxide. Accordingly, the nonvolatile semiconductor device according to example embodiments may include a selection transistor having a reduced size.