The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Feb. 20, 2009
Hirofumi Morise, Kanagawa-ken, JP;
Shiho Nakamura, Kanagawa-ken, JP;
Yuichi Ohsawa, Kanagawa-ken, JP;
Satoshi Yanagi, Kanagawa-ken, JP;
Daisuke Saida, Tokyo, JP;
Hirofumi Morise, Kanagawa-ken, JP;
Shiho Nakamura, Kanagawa-ken, JP;
Yuichi Ohsawa, Kanagawa-ken, JP;
Satoshi Yanagi, Kanagawa-ken, JP;
Daisuke Saida, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A magnetic memory element is provided with first and second ferromagnetic fixed layers, a ferromagnetic memory layer, nonmagnetic first and second intermediate layers. The memory layer is disposed between the first and second fixed layers, and has a variable magnetization direction. In order to cancel asymmetry of a write-in current of the element, the element is provided so that the memory layer receives a larger perpendicular stray field from the first fixed layer than from the second fixed layer, and then a magnetization direction of a portion of the memory layer being nearest to the first intermediate layer and the magnetization direction of the first fixed layer are antiparallel to each other whenever a magnetization direction of a portion of the memory layer being nearest to the second intermediate layer and the magnetization direction of the second fixed layer are parallel to each other, and vice versa.