The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2011

Filed:

Jun. 08, 2009
Applicants:

Yi-bin Lee, Hsinchu, TW;

Po-sen Tseng, Hsinchu County, TW;

Inventors:

Yi-Bin Lee, Hsinchu, TW;

Po-Sen Tseng, Hsinchu County, TW;

Assignee:

Mediatek Inc., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03G 3/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A programmable gain MOS amplifier is disclosed. The programmable gain MOS amplifier is capable of increasing its programmable gain linearly in dB unit by increasing its gain level data linearly. The programmable gain MOS amplifier includes a plurality of gain providers for providing predetermined gains respectively, and a plurality of gain tuners. Each of the plurality of the gain tuners is disposed for adjusting the predetermined gain from the corresponding gain provider. Each of the gain tuners includes a gain enabling module and a gain decreasing module. The gain enabling module allows the corresponding predetermined gain to add to the programmable gain of the MOS amplifier. The gain decreasing module declines the corresponding predetermined gain added to the programmable gain of the MOS amplifier.


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