The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Sep. 09, 2008
Kazumasa Tanida, Kawasaki, JP;
Masahiro Sekiguchi, Yokohama, JP;
Ninao Sato, Mitaka, JP;
Kenji Takahashi, Tsukuba, JP;
Kazumasa Tanida, Kawasaki, JP;
Masahiro Sekiguchi, Yokohama, JP;
Ninao Sato, Mitaka, JP;
Kenji Takahashi, Tsukuba, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate having a through hole. An active layer is formed on a first surface of the semiconductor substrate. An inner wall surface of the through hole, a bottom surface of the through hole closed by the active layer and a second surface of the semiconductor substrate are covered with an insulating layer. A first opening is formed in the insulating layer which is present on the bottom surface of the through hole. A second opening is formed in the insulating layer which is present on the second surface of the semiconductor substrate. A first wiring layer is formed from within the through hole onto the second surface of the semiconductor substrate. A second wiring layer is formed to connect to the second surface through the second opening.