The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Jan. 09, 2006
Sung-lyong Kim, Gyeonggi-do, KR;
Chang-ki Jeon, Gyeonggi-do, KR;
Jong-jib Kim, Seoul, KR;
Jong-tae Hwang, Seoul, KR;
Sung-lyong Kim, Gyeonggi-do, KR;
Chang-ki Jeon, Gyeonggi-do, KR;
Jong-jib Kim, Seoul, KR;
Jong-tae Hwang, Seoul, KR;
Fairchild Korea Semiconductor, Ltd., Bucheon, KR;
Abstract
In one embodiment, a power integrated circuit device is provided. The power integrated circuit device includes a high-side power switch having a high voltage transistor and a low voltage transistor. The high voltage transistor has a gate, a source, and a drain, and is capable of withstanding a high voltage applied to its drain. The low voltage transistor has a gate, a source, and a drain, wherein the drain of the low voltage transistor is connected to the source of the high voltage transistor and the source of the low voltage transistor is connected to the gate of the high voltage transistor, and wherein a control signal is applied to the gate of the low voltage transistor from the power integrated circuit device. The high-side power switch is turned on when a predetermined voltage is applied to the source of the low voltage transistor, a voltage higher than the predetermined voltage is applied to the drain of the high voltage transistor, and a voltage level of the control signal becomes higher than the predetermined voltage by a threshold voltage of the low voltage transistor.