The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2011

Filed:

Aug. 15, 2008
Applicants:

Chiu-chih Chiang, Hsinchu, TW;

Han-chung Tai, Kaohsiung, TW;

Inventors:

Chiu-Chih Chiang, Hsinchu, TW;

Han-Chung Tai, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device for electrostatic discharge protection is disclosed, and at least comprises a high-voltage parasite silicon controlled rectifier (HVSCR) and a diode. The HVSCR has an anode and a cathode, and the cathode of HVSCR is coupled to a ground. The diode, coupled to the HVSCR in series, also has an anode and a cathode. The anode of the diode is coupled to the anode of the HVSCR, and the cathode of the diode is coupled to a terminal applied with a positive voltage. The diode has a second conductivity type zone that could be constructed to form several strips or small blocks spaced apart from each other. Those small blocks could be any shapes and arranged regularly or randomly.


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