The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Jun. 13, 2008
Applicant:
Ji-ho Hong, Hwaseong-si, KR;
Inventor:
Ji-Ho Hong, Hwaseong-si, KR;
Assignee:
Dongbu HiTek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a monitoring pattern for a silicide that may include a plurality of poly pads, a plurality of N-well regions and P-well regions, active regions, and a poly gate line. The plurality of poly pads are disposed on a semiconductor substrate. The plurality of N-well regions and P-well regions are disposed in a single line between the poly pads. The active regions are disposed on the N-well and the P-well regions. The poly gate line electrically connects the active regions to the poly pads and has a configuration permitting it to pass through the active regions a plurality of times.