The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Apr. 14, 2008
Sang Heon Han, Gyunggi-do, KR;
Sang Won Kang, Gyunggi-do, KR;
Jeong Tak OH, Gyunggi-do, KR;
Seung Beom Seo, Gyunggi-do, KR;
Dong Joon Kim, Gyunggi-do, KR;
Hyun Wook Shim, Gyunggi-do, KR;
Sang Heon Han, Gyunggi-do, KR;
Sang Won Kang, Gyunggi-do, KR;
Jeong Tak Oh, Gyunggi-do, KR;
Seung Beom Seo, Gyunggi-do, KR;
Dong Joon Kim, Gyunggi-do, KR;
Hyun Wook Shim, Gyunggi-do, KR;
Samsung LED Co., Ltd., Gyunggi-Do, KR;
Abstract
There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.