The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Apr. 01, 2008
Applicants:
Gon Namkoong, Yorktown, VA (US);
William Alan Doolittle, Hampton, GA (US);
Inventors:
Gon Namkoong, Yorktown, VA (US);
William Alan Doolittle, Hampton, GA (US);
Assignee:
Georgia Tech Research Corporation, Atlanta, GA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 33/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an AlInGaN; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers AlInGaN/GaN; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.