The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
May. 03, 2007
Applicants:
Jae-sung Roh, Ichon-shi, KR;
Jae-geun OH, Ichon-shi, KR;
Hyun-chul Sohn, Ichon-shi, KR;
Sun-hwan Hwang, Ichon-shi, KR;
Jin-ku Lee, Ichon-shi, KR;
Inventors:
Jae-Sung Roh, Ichon-shi, KR;
Jae-Geun Oh, Ichon-shi, KR;
Hyun-Chul Sohn, Ichon-shi, KR;
Sun-Hwan Hwang, Ichon-shi, KR;
Jin-Ku Lee, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A plasma doping method includes providing a doping source over a substrate. The doping source includes dopants that are to be injected into the substrate. At least two different bias voltages are applied to inject the dopants from the doping source to the substrate.
Roh, Jae-Sung. (2011). Plasma doping method and method for fabricating semiconductor device using the same (U.S. Patent No. 7888245). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7888245
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile