The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Oct. 10, 2007
Applicants:
Roger Hamamjy, San Jose, CA (US);
Kuo-wei Chang, Santa Clara, CA (US);
Sean Jong Lee, Santa Clara, CA (US);
Chong W. Lim, Santa Clara, CA (US);
Inventors:
Roger Hamamjy, San Jose, CA (US);
Kuo-Wei Chang, Santa Clara, CA (US);
Sean Jong Lee, Santa Clara, CA (US);
Chong W. Lim, Santa Clara, CA (US);
Assignee:
STMicroelectronics S.R.L., Agrate Brianza, IT;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/326 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase change memory including an ovonic threshold switch is formed using a pulsed direct current (DC) deposition chamber using pulsed DC. Pulsed DC is used to deposit a chalcogenide film. Pulsed DC may be also used to deposit a carbon film.