The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2011

Filed:

Feb. 11, 2008
Applicants:

Keishi Takaki, Tokyo, JP;

Norihiro Iwai, Tokyo, JP;

Hitoshi Shimizu, Tokyo, JP;

Takeo Kageyama, Tokyo, JP;

Inventors:

Keishi Takaki, Tokyo, JP;

Norihiro Iwai, Tokyo, JP;

Hitoshi Shimizu, Tokyo, JP;

Takeo Kageyama, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.


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