The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Oct. 02, 2008
Sung-chul Shin, Daejeon, KR;
Sang-hyun Kim, Daejeon, KR;
Sung-Chul Shin, Daejeon, KR;
Sang-Hyun Kim, Daejeon, KR;
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Abstract
The present invention relates to a method of manufacturing a ferroelectric thin film device, and, more particularly, to a method of manufacturing a ferroelectric thin film device having high crystallinity, good surface roughness and high deposition efficiency through on-axis type sputtering, and to a ferroelectric thin film device manufactured using the method. The method of manufacturing a ferroelectric thin film device includes: depositing an SrRuO(SRO) thin film on an SrTiO(STO) substrate; and depositing a BiFeO(BFO) thin film on the deposited SRO thin film, wherein each of the thin films is deposited in a state in which the STO substrate is isolated from the ground. The method of manufacturing a ferroelectric thin film device is advantageous in that a ferroelectric thin film has a uniform surface, thus greatly decreasing the amount of leakage current and increasing remnant polarization.