The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Jun. 04, 2008
Young Dae Kim, Cheongju-si, KR;
Young Dae Kim, Cheongju-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
Provided is a method for fabricating a rim type photomask. The method includes forming a light blocking pattern and a phase shift pattern on a substrate, forming a groove in the substrate by etching an exposed portion of the substrate using the light blocking pattern and the phase shift pattern as an etch mask, forming a mask layer filling the groove formed in the substrate, forming a mask pattern selectively exposing the groove formed in the substrate by patterning the mask layer, reducing a critical dimension (CD) of the mask pattern by irradiating ultraviolet (UV) rays onto the substrate, etching the light blocking pattern using the mask pattern having the reduced CD as an etch mask; forming a height difference by etching the phase shift pattern by a predetermined thickness from a top surface of the phase shift pattern that is exposed by the etching of the light blocking pattern; and forming a photomask including a rim region defined by the phase shift pattern having the height difference by removing the mask pattern.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile