The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2011

Filed:

Nov. 13, 2008
Applicants:

Hisashi Kajiura, Tokyo, JP;

Yongming LI, Tokyo, JP;

Hongliang Zhang, Beijing, CN;

Yunqi Liu, Beijing, CN;

Lingchao Cao, Beijing, CN;

Xianglong LI, Beijing, CN;

Dacheng Wei, Beijing, CN;

Yu Wang, Beijing, CN;

Dachuan Shi, Beijing, CN;

Inventors:

Hisashi Kajiura, Tokyo, JP;

Yongming Li, Tokyo, JP;

Hongliang Zhang, Beijing, CN;

Yunqi Liu, Beijing, CN;

Lingchao Cao, Beijing, CN;

Xianglong Li, Beijing, CN;

Dacheng Wei, Beijing, CN;

Yu Wang, Beijing, CN;

Dachuan Shi, Beijing, CN;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
D01F 9/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for treating carbon nanotubes is provided. In the method for treating carbon nanotubes (CNTs), the CNTs are treated with SOgas at an elevated temperature, for example, at a temperature in the range of 385° C. to 475° C.


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