The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Dec. 22, 2006
Applicant:
Luis-felipe Giles, Munich, DE;
Inventor:
Luis-Felipe Giles, Munich, DE;
Assignee:
Infineon Technologies AG, , DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method of producing a semiconductor element in a substrate, a plurality of carbide precipitates is formed in the substrate, doping atoms are implanted into the substrate, thereby forming crystal defects in the substrate, the substrate is heated, such that at least a part of the crystal defects is eliminated using the carbide precipitates, and the semiconductor element is formed using the doping atoms.
Giles, Luis-Felipe. (2011). Method of producing a semiconductor element and semiconductor element (U.S. Patent No. 7887634). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7887634
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile