The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2011

Filed:

Sep. 20, 2005
Applicants:

Toshimasa Takeuchi, Hachioji, JP;

Setsuo Nakajima, Hachioji, JP;

Naomichi Saito, Hachioji, JP;

Osamu Nishikawa, Hachioji, JP;

Inventors:

Toshimasa Takeuchi, Hachioji, JP;

Setsuo Nakajima, Hachioji, JP;

Naomichi Saito, Hachioji, JP;

Osamu Nishikawa, Hachioji, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract

To provide a plasma processing apparatus capable of enhancing insulation between an electrode and a casing and adjusting the temperature of the electrode from outside. An electrodeis provided at its discharge space forming surface with a solid dielectric. The electrodeis received in a casingsuch that the solid dielectricon the discharge space forming surface is exposed. An in-casing spacebetween the casingand the electrodedisposed in the casingis filled with substantially pure nitrogen gas. This nitrogen gas pressure is more increased than the pressure in the discharge space. Preferably, nitrogen gas is allowed to flow.


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