The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Aug. 04, 2005
Akiyoshi Watanabe, Hamamatsu, JP;
Hirofumi Miyajima, Hamamatsu, JP;
Hirofumi Kan, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
In an active layerof a semiconductor laser device, a refractive index type main waveguideis formed by a ridge portionof a p-type clad layer. Side surfacesandof the main waveguideform a relative angle θ, based on a total reflection critical angle θc at the side surfacesand, with respect to a light emitting surfaceand a light reflecting surface. The main waveguideis separated by predetermined distances from the light emitting surfaceand the light reflecting surface, and optical path portionsand, for making a laser light Lpass through, are disposed between one end of the main waveguideand the light emitting surfaceand between the other end of the main waveguideand the light reflecting surface. The optical path portionsandare gain type waveguides and emit light components Land L, which, among the light passing through the optical path portionsand, deviate from a direction of a predetermined axis A, to the exterior. A semiconductor laser device and a semiconductor laser device array that can emit laser light of comparatively high intensity and can reduce side peaks are thereby realized.