The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2011

Filed:

May. 07, 2009
Applicants:

Takashi Kubo, Hyogo, JP;

Takashi Itoh, Hyogo, JP;

Yasuhiro Kashiwazaki, Hyogo, JP;

Taku Ogura, Hyogo, JP;

Kiyohiro Furutani, Hyogo, JP;

Inventors:

Takashi Kubo, Hyogo, JP;

Takashi Itoh, Hyogo, JP;

Yasuhiro Kashiwazaki, Hyogo, JP;

Taku Ogura, Hyogo, JP;

Kiyohiro Furutani, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

An internal voltage generating circuit generates and supplies a boosted voltage higher than an internal power supply voltage, as an operating power supply voltage, to a sense amplifier in a read circuit for reading data of a memory cell. A bit line precharge current supplied via an internal data line is produced from the internal power supply voltage. It is possible to provide a nonvolatile semiconductor memory device, which can perform a precise sense operation and an accurate reading of data even under a low power supply voltage condition.


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