The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Apr. 07, 2009
Chang-hee Shin, Chungcheongbuk-do, KR;
Ki-seok Cho, Chungcheongbuk-do, KR;
Si-hyung Cho, Chungcheongbuk-do, KR;
Chang-Hee Shin, Chungcheongbuk-do, KR;
Ki-Seok Cho, Chungcheongbuk-do, KR;
Si-Hyung Cho, Chungcheongbuk-do, KR;
Magnachip Semiconductor, Ltd., Cheongju-si, Chungcheongbuk-do, KR;
Abstract
Disclosed is a method for programming a nonvolatile memory device including one time programmable unit cells. The method for programming a nonvolatile memory device including one time programmable (OTP) unit cells, the method comprising applying a pulse type program voltage having a plurality of cycles. The present invention relates to a method for programming a nonvolatile memory device, which can prevent malfunctions by enhancing a data sensing margin in a read operation through the normal dielectric breakdown of an antifuse during a program operation, and thus improve the reliability in the read operation of an OTP unit cell.