The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Jul. 25, 2008
Ju-hee Park, Guri-si, KR;
Young-moon Kim, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Seung-hoon Lee, Seoul, KR;
Kyoung-lae Cho, Yongin-si, KR;
Sung-jae Byun, Yongin-si, KR;
Seung-hwan Song, Incheon, KR;
Ju-hee Park, Guri-si, KR;
Young-moon Kim, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Seung-hoon Lee, Seoul, KR;
Kyoung-lae Cho, Yongin-si, KR;
Sung-jae Byun, Yongin-si, KR;
Seung-hwan Song, Incheon, KR;
Samsung Electronics Co, Ltd., Gyeonggi-do, KR;
Abstract
A method of programming a non-volatile memory cell includes programming a first bit of multi-bit data by setting a threshold voltage of the non-volatile memory cell to a first voltage level within a first of a plurality of threshold voltage distributions. A second bit of the multi-bit data is programmed by setting the threshold voltage to a second voltage level based on a value of the second bit. The second voltage level is the same as the first voltage level if the second bit is a first value and the second voltage level is within a second of the plurality of threshold voltage distributions if the second bit is a second value. A third bit of the multi-bit data is programmed by setting the threshold voltage to a third voltage level based on a value of the third bit.