The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Dec. 21, 2007
Hee Sung Shim, Gangneung-si, KR;
Hee Sung Shim, Gangneung-si, KR;
Dongbu HiTek Co., Ltd., Seoul, KR;
Abstract
The embodiment relates to a complementary metal oxide semiconductor (CMOS) image sensor and more particularly, to a CMOS image sensor and a manufacturing method thereof capable of improving electron storing capacity in a floating diffusion area. The CMOS image sensor includes a first gate electrode on a semiconductor substrate; a photodiode in the semiconductor substrate on one side of the first gate electrode; a floating diffusion area in the semiconductor substrate on an opposite side of the first gate electrode; a capacitor including a lower capacitor electrode connected to the floating diffusion area, a dielectric layer on the lower capacitor electrode, and an upper capacitor electrode; a drive capacitor coupled to the lower capacitor electrode and having a second gate electrode connected to the floating diffusion area. The electron storing capacity of the floating diffusion node is increased, making it possible to improve the dynamic range of the image sensor.