The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
May. 25, 2010
Shin Hashimoto, Itami, JP;
Makoto Kiyama, Itami, JP;
Takashi Sakurada, Osaka, JP;
Tatsuya Tanabe, Itami, JP;
Kouhei Miura, Osaka, JP;
Tomihito Miyazaki, Osaka, JP;
Shin Hashimoto, Itami, JP;
Makoto Kiyama, Itami, JP;
Takashi Sakurada, Osaka, JP;
Tatsuya Tanabe, Itami, JP;
Kouhei Miura, Osaka, JP;
Tomihito Miyazaki, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor () is provided with a supporting substrate () composed of gallium nitride, a buffer layer () composed of a first gallium nitride semiconductor, a channel layer () composed of a second gallium nitride semiconductor, a semiconductor layer () composed of a third gallium nitride semiconductor, and electrode structures (a gate electrode (), a source electrode () and a drain electrode () for the transistor (). The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration Nof the first gallium nitride semiconductor is 4×10cmor more. The carbon concentration Nof the second gallium nitride semiconductor is less than 4×10cm.